sot-563 plastic-encapsulate transistors EMT1 general purpose transistors (dual digital transistors) features z two 2sa1037 a k chips in a package z mounting possible with sot-56 3 automatic mounting machines z transistor elements are indep endent,eliminating interference marking: t1 equivalent circuit absolute maximum ratings (t a =25 ) symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -6 v i c collector current -150 ma p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-50 a, i c =0 -6 v collector cut-off current i cbo v cb =-60v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-7v, i c =0 -0.1 a dc current gain h fe v ce =-6v, i c =-1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =-50ma, i b =-5ma -0.5 v transition frequency f t v ce =-12v, i c =-2ma, f=100mhz 140 mhz output capacitance c ob v cb =-12v, i e =0, f=1mhz 5 pf sot-563 tr 2 tr 1 (3) (2) (1) (4) (5) (6) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2012
-0.1 -1 -10 1 10 100 -1 -10 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 -0.1 -1 -10 -100 -200 -400 -600 -800 -1000 -1 -10 -100 -0 -50 -100 -150 -200 -1 -10 -100 10 100 1000 -0 -2 -4 -6 -8 -0 -2 -4 -6 -8 -10 -12 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1 -1 -10 -100 EMT1 c ib c ob f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? capacitance c (pf) reverse voltage v (v) common emitter v ce =-12v t a =25 -0.3 i c f t ?? transition frequency f t (mhz) collector current i c (ma) -50 p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) =10 t a =25 t a =100 base-emitter saturation voltage v besat (mv) collector current i c (ma) i c v besat ?? i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =10 t a =25 t a =100 common emitter t a =25 -150 t a =100 t a =25 i c collector current i c (ma) dc current gain h fe common emitter v ce =-6v h fe ?? -50ua -45ua -40ua -35ua -30ua -25ua -20ua -15ua -20 -10ua i b =-5ua static characteristic collector current i c (ma) collector-emitter voltage v ce (v) i c ?? v be collector current i c (ma) base-emmiter voltage v be (mv) common emitter v ce =-6v t a =25 ta=100 o c 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2012
|
